Claire Berger

Professor of the Practice

Education

Honors & Awards

HIghly Cited Researcher: on the list of the 1% most cited researchers in physics six years in a row 2019-2014 (Clarivate analytics). Fellow of the American Physical Society (2014). Recipient of  the Ancel Prize (Société française de Physique), and the CNRS medal for Young Researchers.

Research

Claire Berger is Director of Research at the French National Center for Scientific Research - Néel Institute working at the Georgia Institute of Technology in W. A. de Heer’s group. She obtained the PhD in Physics from the University of Grenoble, France, with a dissertation on the electronic properties of AlMn quasicrystals. She then moved to a postdoc position at the Centre d’Etudes Atomiques, where she produced and studied amorphous films, and was hired as a researcher at the CNRS ‘s Laboratory for Study of Electronic Properties of Solids (LEPES), in Grenoble. She focused the first part of her carrier on electronic properties of quasicrystalline materials grown and characterized at LEPES. She contributed to the experimental evidence for a metal-insulator transition in these metal- based compounds.

 At Georgia Tech, her current scientific interests are primarily nanoscience and electronic property of graphene-based systems. She co-authored the first article demonstrating the two dimensional properties of graphene and proposing graphene for electronics, and together with Walt de Heer and Phil First she co-authored the first patent for graphene electronics (2003).

 She is co-author of more than 200 publications in international journals, has a citation index of 10,880 and an H index of 41.

Papers

20  selected Publications

Exceptional ballistic transport in epitaxial graphene nanoribbons. J. Baringhaus, M. Ruan , F. Edler, A. Tejeda, M. Sicot, A. Taleb-Ibrahimi, A.P. Li, Z. Jiang, E.H. Conrad, C. Berger, C. Tegenkamp, W. A. de Heer. Nature 506, 349 (2014).
Crystalline Silicon Transfer: A “Top-Down” Solution to Integrate Epitaxial Graphene into Silicon CMOS. R. Dong, Z. Guo, M. Ruan, J. Kunc, S. K Bhattacharya, C. Berger, W. A. de Heer. J. Phys D 47, 094001 (8pp) (2014).
A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene. J. Hicks, A. Tejeda, A. A. Taleb-Ibrahimi, M.S. Nevius, F. F. Wang, K. Shepperd, J. J. Palmer, F. Bertran, P. Le Fèvre, J. Kunc, W. A. de Heer, C. Berger, E.H. Conrad. Nature Physics 9, 49 (2013).
Record Maximum Oscillation Frequency in C-face Epitaxial Graphene transistors. Z. Guo, R. Dong, P.S. Chakraborty, N. Lourenco, J. Palmer, Y. Hu, M. Ruan, J. Hankinson, J. Kunc, J. D. Cressler, C. Berger, W. A. de Heer. Nano Letters 13, 942 (2013).

Epitaxial graphene on silicon carbide: Introduction to structured graphene. M. Ruan, Y. Hu, Z. Guo, R. Dong, J. Palmer, J. Hankinson, C. Berger, W. A. de Heer. MRS Bulletin 37, 1146 (2012).
Large area and structured epitaxial graphene produced.  by confinement controlled sublimation of silicon carbide. W. A. de Heer, C. Berger, M. Ruan, M. Sprinkle, X. Li, Yike Hu, B. Zhang, J. Hankinson, E.H. Conrad. Proc Nat. Academy Science 108, 16900 (2011).
Scalable templated growth of graphene nanoribbons on SiC. M. Sprinkle, M. Ruan, X. Wu, Y. Hu, M. Rubio-Roy, J. Hankinson, C. Berger, W. A. de Heer. Nature Nanotechnology 5, 727 (2010).
First direct observation of a nearly ideal graphene band structure. M. Sprinkle,  D. Siegel, Y. Hu, J. Hicks, P. Soukiassian, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, S. Vizzini, H. Enriquez, S. Chiang, C. Berger, W.A. de Heer, A. Lanzara, E.H. Conrad. Phys Rev Lett 103, 22. 6803 (2009).
Anomalous quantum Hall effect in epitaxial graphene. X. Wu, Y. Hu, M. Ruan, N. K Madiomanana, J. Hankinson, M. Sprinkle, C. Berger, W. A. de Heer. Appl Phys Lett 95, 223108 (2009).
Epitaxial Graphene electron devices on SiC substrates. J. Kedzierski, P.-L. Hsu, P. Healey, P. Wyatt, C. Keast, M. Sprinkle, C. Berger, W. de Heer. IEEE /Transactions on Electron Devices 55, 2078 (2008).

Weak Anti-Localization in epitaxial graphene. X. Wu, X. Li, Z. Song, C. Berger, W. A. de Heer. Phys Rev Lett 98, 136801 (2007).
Electronic Confinement and  Coherence in Patterned Epitaxial Graphene. C Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, W. A. de Heer
Science 3012, 1191 (2006).

Liquid Carbon, Carbon-Glass Beads, and the Crystallization of Carbon Nanotubes. W. A. de Heer, P. Poncharal, C. Berger, J. Gezo, Z. Song, J. Bettini, D. Ugarte, Science 307, 907 (2005).

Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. C. Berger, Z.Song, T. Li, X. Li, A. Y. Ogbazghi, R. Feng, Z. Dai, A. N. Marchenkov, E. H. Conrad, P. N. First, W. A. de Heer. J. Phys Chem B 108, 19912 (2004).

Room temperature ballistic conduction in carbon nanotubes. P. Poncharal, C. Berger, Yan Yi, Z. Whang, W. de Heer. J. Phys Chem 106, 12102 (2002) « Feature article »
Evidence for variable range hopping conductivity in the ordered quasicrystal i-AlPdRe. J. Delahaye, J.-P. Brison, C. Berger. Phys Rev Lett 81, 42. 04 (1998).
Density of states in quasicrystals and approximants : tunneling experiment on bare and oxidized surfaces. N. Davydov, D. Mayou, C. Berger, C. Gignoux, A. Neumann, A. G. M. Jansen, P. Wyder. Phys Rev Lett 77, 3173 (1996).
Evidence for unconventional electronic transport in quasicrystals. D.Mayou, C.Berger, F.Cyrot-Lackmann, T. Klein, P.Lanco. Phys Rev Lett 70, 3915 (1993).
Proximity of a metal-insulator transition in icosahedral phases of high structural quality. T. Klein, C. Berger, D. Mayou, F. Cyrot-Lackmann. Phys Rev Lett 66, 2907 (1991).
Evidence of a spin glass transition in the quasicrystal Al73Mn21Si6 C. Berger, J.-J. Préjean. Phys Rev Lett 64, 1769 (1990).